Gallium arsenide pieces, % trace metals basis; CAS Number: AsGa; find Sigma-Aldrich MSDS, related peer-reviewed papers, technical. SAFETY DATA SHEET. GALLIUM ARSENIDE OPTICAL CRYSTAL. According to Regulation (EC) No/ (REACH). Revision MATERIAL SAFETY DATA SHEET. I. PRODUCT IDENTIFICATION. Trade Name: Gallium Arsenide. Synonym: Gallium Monoarsenide. Formula: GaAs. CAS #.
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Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuitsmonolithic microwave integrated circuitsinfrared light-emitting diodeslaser diodessolar cells and optical windows.
The time now is gas For few researchers measured arsenic content in blood has been too high even when they don’t do mechanical machining of the stuff. Many thanks in advance. In the s, GaAs solar cells took over from silicon as the cell type most commonly used for photovoltaic arrays for satellite applications.
GaAs – Gallium Arsenide – Epitaxy Ready Polished Wafers: Wafer Technology
Such a layer is relatively robust and easy mxds handle. Mechanical Specifications Gallium arsenide can be supplied as ingots or ingot sections or as-cut, etched or polished wafers. In case of skin contact Wash off with soap and plenty of water. Prevent further leakage or spillage if safe to do so. Anticipate seizures and treat if necessary If breathed in, move person into fresh air.
SAFETY DATA SHEETS
This allows extremely high performance and high electron mobility HEMT transistors and other quantum well devices. Faas US version, EU version 23 languages and more, please refer to xixisys.
The measurement device contains a light source and a device for the spectral detection of the band gap. Combined with a high dielectric constantthis property makes GaAs a very good substrate for Integrated circuits and unlike Si provides natural isolation between devices and circuits.
GaAs may have applications in spintronics as it can be used instead of platinum in spin-charge converters and may be more tunable. Gallium arsenide single crystals can be prepared by three industrial processes: In addition, a Si crystal has a very stable structure and can be grown to very large diameter boules and processed with very good yields. The electronic properties of these defects interacting with others cause the Fermi level to be pinned to near the center of the bandgap, so that this GaAs crystal has very low concentration of electrons and holes.
P Obtain special instructions before use. Silicon has an indirect bandgap and so is relatively poor at emitting light. Since the position of the band gap ggaas temperature dependent, it shifts about 0. Do not discharge to sewer systems.
Do not use emetics. Contaminated packaging Containers can be triply rinsed or equivalent and offered for recycling or reconditioning.
CAS MSDS (GALLIUM ARSENIDE) Melting Point Boiling Point Density CAS Chemical Properties
I have searched all day for info on this stuff and although it says there’s nothing on Mxds being toxic, I have found comprehensive and sometimes contradictory information on Arsenic and Gallium compounds being bad. Reacts with bases with evolution of hydrogen. About this time I got really sick somehow. If inhaled If breathed in, move person into fresh air. Inthe GaAs heterostructure solar cells were developed by the team led by Zhores Alferov in the USSR   achieving much higher efficiencies.
Avoid formation of dust and aerosols. Gloves must be inspected prior to use.
Because taas lack a fast CMOS structure, Gaqs circuits must use logic styles which have much higher power consumption; this has made GaAs logic circuits unable to compete with silicon logic circuits. Attacked by cold concentrated hydrochloric acid. The type of protective equipment must be selected according to the concentration and amount of the dangerous substance at the specific workplace.
Some electronic properties of gallium arsenide are superior to those of silicon. Aug 12, Revision Date: Consequently, GaAs thin films must be supported on a substrate material.
If not breathing, give artificial respiration. It is also a fairly good thermal conductor, thus enabling very dense packing of transistors that need to get rid of their heat of operation, all very desirable for design and manufacturing of very large ICs. I am pretty sure that it is a carcinogen.
This evaluation applies to the group of chemicals as a whole and not necessarily to all individual chemicals within the group.
With the changing of the band gap, 0. Gas can be used for various transistor types: P Do not handle until all safety precautions have been read and understood. GaAs diodes can be used for the detection of X-rays.